![]() ![]() H01L29/66- Types of semiconductor device Multistep manufacturing processes therefor.PN junction depletion layer or carrier concentration layer Details of semiconductor bodies or of electrodes thereof Multistep manufacturing processes therefor H01L29/00- Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g.H01L- SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10.Assignors: WILMINGTON TRUST, NATIONAL ASSOCIATION Status Active legal-status Critical Current Anticipated expiration legal-status Critical Links RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: WILMINGTON TRUST, NATIONAL ASSOCIATION Assigned to GLOBALFOUNDRIES U.S. ![]() ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Publication of US9159816B2 publication Critical patent/US9159816B2/en Application granted granted Critical Assigned to WILMINGTON TRUST, NATIONAL ASSOCIATION reassignment WILMINGTON TRUST, NATIONAL ASSOCIATION SECURITY AGREEMENT Assignors: GLOBALFOUNDRIES INC. Assignors: INTERNATIONAL BUSINESS MACHINES CORPORATION Assigned to GLOBALFOUNDRIES INC. 2 LLC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HARAME, DAVID L., LIU, QIZHI Priority to US14/497,579 priority Critical patent/US9159816B2/en Publication of US20150008562A1 publication Critical patent/US20150008562A1/en Assigned to GLOBALFOUNDRIES U.S. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Application filed by GlobalFoundries Inc filed Critical GlobalFoundries Inc Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION reassignment INTERNATIONAL BUSINESS MACHINES CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Original Assignee GlobalFoundries Inc Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) Harame Qizhi Liu Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Active Application number US14/497,579 Other versions US20150008562A1 Google Patents PNP bipolar junction transistor fabrication using selective epitaxyÄownload PDF Info Publication number US9159816B2 US9159816B2 US14/497,579 US201414497579A US9159816B2 US 9159816 B2 US9159816 B2 US 9159816B2 US 201414497579 A US201414497579 A US 201414497579A US 9159816 B2 US9159816 B2 US 9159816B2 Authority US United States Prior art keywords base top surface bipolar junction device region junction transistor Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google Patents US9159816B2 - PNP bipolar junction transistor fabrication using selective epitaxy US9159816B2 - PNP bipolar junction transistor fabrication using selective epitaxy ![]()
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